Dispositif monté sous pression thyristor haute puissance 4500V
$4101-9 Piece/Pieces
$310≥10Piece/Pieces
Type de paiement: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Quantité de commande minimum: | 1 Piece/Pieces |
transport: | Ocean,Air |
Hafen: | SHANGHAI |
$4101-9 Piece/Pieces
$310≥10Piece/Pieces
Type de paiement: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Quantité de commande minimum: | 1 Piece/Pieces |
transport: | Ocean,Air |
Hafen: | SHANGHAI |
Modèle: YZPST-R3708FC45V
marque: YZPST
Unités de vente | : | Piece/Pieces |
Type de colis | : | 1. Emballage anti-électrostatique 2. Boîte en carton 3. Emballage de protection en plastique |
THYRISTOR DE HAUTE PUISSANCE POUR DES APPLICATIONS DE COMMANDE DE PHASE
YZPST-R3708FC45V
Fonctionnalités:
. Toute la structure diffusée
. Configuration de la porte d'amplification linéaire
. Capacité de blocage jusqu'à 4500 volts
. Temps d'arrêt maximal garanti
. Haute capacité dV / dt
. Dispositif assemblé sous pression
|
V DRM
= Ré p étiti v e p eak o ff état vo lta g e
V RSM = N o n re p etiti v e p eak re v erse vo io n (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
200 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
200 V/μsec |
Conduite - sur état
forme d'onde à 80% évalué V DRM . Porte ouvert. Tj = 125 o C.
(5) Non répétitif valeur.
(6) le valeur de di / dt est établi dans Conformément à EIA / NIMA la norme RS-397, Section
5-2-2-6. T h e valeur défini aurait être dans une addition à cette obtenu de une snubber circuit, co m p montant une 0,2 μ F condensateur et 20 oh m s résistance dans parallèle avec les thristor sous test.
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
3708 |
|
A |
Sinewave,180o conduction,TS=55oC |
RMS value of on-state current |
ITRMS |
|
7364 |
|
A |
TS=25oC |
Peak one cpstcle surge (non repetitive) current |
ITSM |
|
50000 |
|
A |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
12.5x106 |
|
A2s |
10.0 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 12 V; RL= 12 ohms |
Holding current |
IH |
|
450 |
|
mA |
VD = 12 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.1 |
|
V |
ITM = 4000 A; Duty cpstcle ≤ 0.01% Tj = 125 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
250 |
|
A/μs |
Switching from VDRM ≤ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/μs |
Switching from VDRM ≤ 1000 V |
ÉLECTRIQUE CARACTÉRISTIQUES ET ÉVALUATIONS R3708FC45 - Po w er Th y ristor
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
15 |
|
A |
|
Gate current required to trigger all units |
IGT |
30 |
300 200 125 |
|
mA mA mA |
VD = 12V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = +25 oC VD = 12V;RL = 6 ohms;Tj = +125oC |
Gate voltage required to trigger all units |
VGT |
0.30 |
5 3 |
|
V V V |
VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
15 |
|
V |
|
D y namic
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
|
2.5 |
μs |
ITM = 50 A; VD = 1500 V Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 μs; tp = 20 μs |
Turn-off time (with VR = -50 V) |
tq |
|
|
250 |
μs |
ITM =4000 A; di/dt = 60 A/μs; VR =100 V; Re-applied dV/dt = 20 V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Tp=2000us |
Reverse recovery current |
Irr |
|
|
|
A |
ITM =4000 A; di/dt = 60 A/μs; VR =100 V |
THERMIQUE ET MÉCANIQUE CARACTÉRISTIQUES ET NOTATIONS
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+140 |
|
oC |
|
Thermal resistance - junction to sink |
RΘ (j-s) |
|
0.0075 0.0150 |
|
o C/W |
Double sided cooled Single sided cooled |
Mounting force |
P |
98 |
113 |
|
kN |
|
Weight |
W |
|
|
2.7 |
Kg. |
|
* Montage surfaces s m ooth, plat et graissé
Sym |
A |
B |
C |
E |
Inches |
3.9 3 |
5.90 |
5.15 |
1.37 |
mm |
100 |
150 |
131 |
35±1.0 |
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